Abstract:

As the performance of state-of-the-art lithium-ion batteries (LIBs) approaches fundamental material and engineering limits, we must seek novel paradigms in energy storage to power a new age of wireless electronics, mobility, and clean energy. Realizing the necessary advances in battery performance, cost, lifetime, and safety to support this transition will require breakthroughs in virtually every battery component (anode, cathode, and electrolyte). In this talk, I will provide an overview of my team’s basic research on topics ranging from development of electrolytes for improving the electrochemical reversibility of advanced metal anodes (Li metal, Zn) to increasing the stability and loading of high voltage cathode materials. I will also briefly introduce my team’s more recent efforts to develop ion-gated memory devices and the motivation for this exciting new research area.

Bio:

Dr. Marshall Schroeder is a materials engineer with more than ten years of experience in energy storage research and development. He currently serves as team lead for the Electrolyte and Interface Science Team in the Battery Science Branch at the DEVCOM Army Research Laboratory (ARL). Before joining ARL in 2015, Dr. Schroeder received his B.S. and Ph.D. degrees in Materials Science and Engineering from the University of Maryland. He was awarded the John and Maureen Hendricks Energy Research Fellowship for his graduate studies which focused on synthesis, characterization, and testing of battery materials for Li-air and thin-film solid state batteries. At ARL he has been recognized with the ARL Director’s Early Career Award and was also recognized by the Office of the Under Secretary of Defense for Research and Engineering as the FY21Q3 Laboratory Scientist of the Quarter. He has published more than 50 peer reviewed research articles with >9300 citations and holds multiple U.S patents related to outcomes of this research. His current research interests include electrolytes for next generation battery technologies and development of ion-gated neuromorphic devices.